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| PD - 95245 IRF7606PBF Generation V Technology Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description l l HEXFET(R) Power MOSFET S 1 2 3 4 8 7 A D D D D S S G VDSS = -30V RDS(on) = 0.09 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -30 -3.6 -2.9 -29 1.8 1.1 14 20 30 -5.0 -55 to + 150 240 (1.6mm from case) Units V A W W mW/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 70 Units C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com 1 5/13/04 IRF7606PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- -1.0 2.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.024 0.075 0.130 --- --- --- --- --- --- 20 2.1 7.6 13 20 43 39 520 300 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = -1mA 0.09 VGS = - 10V, ID = -2.4A 0.15 VGS = -4.5V, ID = -1.2A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -1.2A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 30 ID = -2.4A 3.1 nC VDS = -24V 11 VGS = -10V, See Fig. 9 --- VDD = -10V --- ID = -2.4A ns --- RG = 6.0 --- RD = 4.0 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 8 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 43 50 -1.8 A -29 -1.2 64 76 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.4A, VGS = 0V TJ = 25C, IF = -2.4A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. ISD -2.4A, di/dt -130A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRF7606PBF 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 1 0.1 -3.0V 1 20s PULSE WIDTH TJ = 25C A 10 1 0.1 1 -3.0V 20s PULSE WIDTH TJ = 150C A 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ID , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 10 TJ = 25C 10 TJ = 150C TJ = 150C TJ = 25C 1 1 VDS = -10V 20s PULSE WIDTH 3.0 3.5 4.0 4.5 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 A 1.6 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7606PBF RDS(on) , Drain-to-Source On Resistance ( ) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -2.7A 0.3 1.5 0.2 VGS = -4.5V 1.0 0.1 0.5 VGS = -10V 0.0 0 2 -I 0.0 -60 -40 -20 0 20 40 60 80 VGS = -10V 100 120 140 160 A 4 6 8 10 12 A TJ , Junction Temperature (C) , , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.14 RDS(on) , Drain-to-Source On Resistance ( ) 0.12 0.10 I 0.08 = -3.6A 0.06 0.04 2 -V 6 10 14 A /5 , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com IRF7606PBF 1000 -VGS , Gate-to-Source Voltage (V) 800 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = -2.7A VDS = -24V VDS = -15V 16 C, Capacitance (pF) Ciss 600 12 Coss 400 8 200 Crss 4 0 1 10 100 A 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 9 20 25 30 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 Thermal Response (Z thJA ) 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7606PBF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D - B3 DDDD 8765 H 0.25 (.010) 1234 SSSG e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1234 D1 D1 D2 D2 8765 DUAL 1234 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 3 8765 E - A- .0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF 7501 LOT CODE (XX) DATE CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z 6 www.irf.com IRF7606PBF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 www.irf.com 7 |
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